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never stop thinking. hys64d[32020/1 6000]hdl?6?c 200-pin small outline dual-in-line memory modules so-dimm ddr sdram data sheet, rev. 0.5, nov. 2003 memory products
edition 2003-08 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2003. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
never stop thinking. hys64d[32020/1 6000]hdl?6?c 200-pin small outline dual-in-line memory modules so-dimm ddr sdram data sheet, rev. 0.5, nov. 2003 memory products
template: mp_a4_v2.0_2003-06-06.fm hys64d[32020/16000]hdl?6?c, , revision history: rev. 0.5 2003-08 previous version: 2003-03 page subjects (major changes since last revision) we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: techdoc.mp@infineon.com
data sheet 5 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.1 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.2 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.1 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3.2 current specification and conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.3 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4 spd contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 table of contents
data sheet 6 rev. 0.5, 2003-08 200-pin small outline dual-in-line memory modules so-dimm hys64d[32020/16000]hdl?6?c 1 overview 1.1 features non-parity 200-pin small outline dual-in-line memory modules one rank 16m 64 and two ranks 32m 64 organization jedec standard double data rate synchronous drams (ddr sdram) single +2.5v ( 0.2 v) power supply built with 256 mbit ddr sdrams organised as 16 in p?tsopii?66?1 packages programmable cas latency, burst length, and wrap sequence (sequential & interleave) auto refresh (cbr) and self refresh all inputs and outputs sstl_2 compatible serial presence detect with e 2 prom jedec standard form factor: 67.60 mm 31.75 mm 2.4 / 3.80 mm jedec standard reference layout raw cards a and c gold plated contacts 1.2 description the hys64d[32020/16000]hdl?6?c and are industry standard 200-pin small outline dual-in-line memory modules (so-dimms) organized as 32m 64 and 16m 64. the memory array is designed with double data rate synchronous drams (ddr sdram). a variety of decoupling capacitors are mounted on the pc board. the dimms feature serial presence detect based on a serial e 2 prom device using the 2-pin i 2 c protocol. the first 128 bytes are programmed with configuration data and the second 128 bytes are available to the customer. part number speed code ? 6unit speed grade component ddr333b ? module pc2700?2533 ? max. clock frequency @cl3 f ck3 166 mhz @cl2.5 f ck2.5 166 mhz @cl2 f ck2 133 mhz
data sheet 7 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules overview notes 1. all part numbers end with a place code designating the silicon-die revision. reference information available on request. example: hys64d32020gdl-6-b, indicating rev. b dies are used for sdram components. 2. the compliance code is printed on the module labels describing the speed sort (for example ?pc2700?), the latencies and spd code definition (for example ?2033 ? 0? means cas latency of 2.0 clocks, rcd 1) latency of 3 clocks, row precharge latency of 3 clocks, and jedec spd code definiton version 0), and the raw card used for this module. table 1 ordering information type compliance code description sdram technology pc2700 (cl=2.5) hys64d16000hdl?6?c pc2700s?2533?0?c1 one rank 128 mb so-dimm 256 mbit ( 16) hys64d32020hdl?6?c pc2700s?2533?0?a1 two ranks 256 mb so-dimm 256 mbit ( 16) 1) rcd: row-column-delay
hys64d[32020/16000]hdl?6?c small outline ddr sdram modules pin configuration data sheet 8 rev. 0.5, 2003-08 2 pin configuration table 2 pin definitions and functions symbol type 1) 1) i: input; o: output; i/o: bidirectional in-/output; ai: analog input; pwr: power supply; gnd: signal ground; nc: not connected; nu: not usable function a0 - a12 i address inputs ba0, ba1 i bank address dq0 - dq63 i/o data input/output ras , cas , we i command input cke0 - cke1 i clock enable dqs0 - dqs7 i/o sdram data strobe ck0 - ck1, i sdram clock (true signal) ck0 - ck1 i sdram clock (complementary signal) dm0 - dm8 i data mask s0 , s1 2) 2) cke1 and s1 are used on two bank modules only ichip select v dd pwr power (+ 2.5 v) v ss gnd ground v ddq pwr i/o driver power supply v ddid pwr vdd indentification flag v ref ai i/o reference supply v ddspd pwr serial eeprom power supply scl i serial bus clock sda i/o serial bus data line sa0 - sa2 i slave address select nc nc not connected nu nu not usable, reserved for future use
data sheet 9 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules pin configuration table 3 pin configuration front side back side front side back side front side back side pin # symbol pin # symbol pin # symbol pin # symbol pin # symbol pin # symbol 1 v ref 2 v ref 65 dq26 66 dq30 133 dqs4 134 dm4 3 v ss 4 v ss 67 dq27 68 dq31 135 dq34 136 dq38 5 dq0 6 dq4 69 v dd 70 v dd 137 v ss 138 v ss 7 dq1 8 dq5 71 (cb0) 72 (cb4) 139 dq35 140 dq39 9 v dd 10 v dd 73 (cb1) 74 (cb5) 141 dq40 142 dq44 11 dqs0 12 dm0 75 v ss 76 v ss 143 v dd 144 v dd 13 dq2 14 dq6 77 (dqs8) 78 (dm8) 145 dq41 146 dq45 15 v ss 16 v ss 79 (cb2) 80 (cb6) 147 dqs5 148 dm5 17 dq3 18 dq7 81 v dd 82 v dd 149 v ss 150 v ss 19 dq8 20 dq12 83 (cb3) 84 (cb7) 151 dq42 152 dq46 21 v dd 22 v dd 85 du 86 du 153 dq43 154 dq47 23 dq9 24 dq13 87 v ss 88 v ss 155 v dd 156 v dd 25 dqs1 26 dm1 89 (ck2) 90 v ss 157 v dd 158 ck1 27 v ss 28 v ss 91 (ck2) 92 v dd 159 v ss 160 ck1 29 dq10 30 dq14 93 v dd 94 v dd 161 v ss 162 v ss 31 dq11 32 dq15 95 cke1 96 cke0 163 dq48 164 dq52 33 v dd 34 v dd 97 du 98 du 165 dq49 166 dq53 35 ck0 36 v dd 99 a12 100 a11 167 v dd 168 v dd 37 ck0 38 v ss 101 a9 102 a8 169 dqs6 170 dm6 39 v ss 40 v ss 103 v ss 104 v ss 171 dq50 172 dq54 key 105 a7 106 a6 173 v ss 174 v ss 107 a5 108 a4 175 dq51 176 dq55 41 dq16 42 dq20 109 a3 110 a2 177 dq56 178 dq60 43 dq17 44 dq21 111 a1 112 a0 179 v dd 180 v dd 45 v dd 46 v dd 113 v dd 114 v dd 181 dq57 182 dq61 47 dqs2 48 dm2 115 a10/ap 116 ba1 183 dqs7 184 dm7 49 dq18 50 dq22 117 ba0 118 ras 185 v ss 186 v ss 51 v ss 52 v ss 119 we 120 cas 187 dq58 188 dq62 53 dq19 54 dq23 121 s0 122 s1 189 dq59 190 dq63 55 dq24 56 dq28 123 du 124 du 191 v dd 192 v dd 57 v dd 58 v dd 125 v ss 126 v ss 193 sda 194 sa0 59 dq25 60 dq29 127 dq32 128 dq36 195 scl 196 sa1 61 dqs3 62 dm3 129 dq33 130 dq37 197 v ddspd 198 sa2 63 v ss 64 v ss 131 v dd 132 v dd 199 v ddid 200 du
hys64d[32020/16000]hdl?6?c small outline ddr sdram modules pin configuration data sheet 10 rev. 0.5, 2003-08 figure 1 pin configuration table 4 density organization memory ranks sdrams # of sdrams # of row/bank/ columns bits refresh period interval 128mb 16m 64 1 16m 16 4 13/2/9 8k 64 ms 7.8 s 256mb 32m 64 2 16m 16 8 13/2/9 8k 64 ms 7.8 s pin 1 pin 39 pin 41 pin 199 pin 2 pin 40 pin 42 pin 200 front side back side
data sheet 11 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules pin configuration figure 2 block diagram - one rank 16m 64 ddr sdram so-dimm hys64d16000hdl?6?c dm3 dm2 dq0 dq1 dq2 dq3 dm0 dq4 dq5 dq6 dq7 dq8 dq9 dq10 dq11 i/o 8 i/o 9 i/o 10 i/o 11 d0 dq12 dq13 dq14 dq15 i/o 12 i/o 13 i/o 14 i/o 15 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 dq24 dq25 dq26 dq27 i/o 8 i/o 9 i/o 10 i/o 11 d1 dq28 dq29 dq30 dq31 i/o 12 i/o 13 i/o 14 i/o 15 dq40 dq41 dq42 dq43 i/o 8 i/o 9 i/o 10 i/o 11 d2 dm4 dq44 dq45 dq46 dq47 i/o 12 i/o 13 i/o 14 i/o 15 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 dq56 dq57 dq58 dq59 ldm i/o 8 i/o 9 i/o 10 i/o 11 d3 dq60 dq61 dq62 dq63 i/o 12 i/o 13 i/o 14 i/o 15 dm1 dq32 dq33 dq34 dq35 i/o 0 i/o 1 i/o 2 i/o 3 dq36 dq37 dq38 dq39 i/o 4 i/o 5 i/o 6 i/o 7 dm5 dm6 dm7 unless otherwise noted, resistor values are 22 ohm with +/- 5% tolerance i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm udm ldm ldm i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 ldm udm i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ba0-ba1 a0-an ras cas we cke0 sdrams d0-d3 sdrams d0-d3 sdrams d0-d3 sdrams d0-d3 sdrams d0-d3 sdrams d0-d3 dqs0 ldqs dqs1 udqs dqs2 ldqs dqs3 udqs dqs7 udqs ldqs dqs6 dqs5 udqs dqs4 ldqs cke1 n.c. note: dq wiring may differ from that described in this drawing; however dq/dm/dqs relationships are maintained as shown. v dd id strap connections: strap out (open): v dd = v dd q ck0 ck1 2 loads 2 loads ck 1 ck 0 a0 serial presence detect (spd) a1 a2 scl sda sa0 sa1 sa2 wp v dd v ss sdrams d0-d3 sdrams d0-d3, spd v ref sdrams d0-d3 v dd spd spd v dd id v dd and v dd q s s s s s 0
hys64d[32020/16000]hdl?6?c small outline ddr sdram modules pin configuration data sheet 12 rev. 0.5, 2003-08 a dm3 dqs2 dq0 dq1 dq2 dq3 dm0 dq4 dq5 dq6 dq7 dq8 dq9 dq10 dq11 i/o 8 i/o 9 i/o 10 i/o 11 d0 dq12 dq13 dq14 dq15 i/o 12 i/o 13 i/o 14 i/o 15 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 dq24 dq25 dq26 dq27 dq28 dq29 dq30 dq31 dq40 dq41 dq42 dq43 dm4 dq44 dq45 dq46 dq47 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 dq56 dq57 dq58 dq59 dq60 dq61 dq62 dq63 dm1 dq32 dq33 dq34 dq35 dq36 dq37 dq38 dq39 dm5 dm6 dm7 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ldm i/o 8 i/o 9 i/o 10 i/o 11 d4 i/o 12 i/o 13 i/o 14 i/o 15 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ldm i/o 8 i/o 9 i/o 10 i/o 11 d2 i/o 12 i/o 13 i/o 14 i/o 15 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ldm i/o 8 i/o 9 i/o 10 i/o 11 d6 i/o 12 i/o 13 i/o 14 i/o 15 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ldm i/o 8 i/o 9 i/o 10 i/o 11 d3 i/o 12 i/o 13 i/o 14 i/o 15 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ldm i/o 8 i/o 9 i/o 10 i/o 11 d1 i/o 12 i/o 13 i/o 14 i/o 15 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ldm i/o 8 i/o 9 i/o 10 i/o 11 d7 i/o 12 i/o 13 i/o 14 i/o 15 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ldm i/o 8 i/o 9 i/o 10 i/o 11 d5 i/o 12 i/o 13 i/o 14 i/o 15 i/o 0 i/o 1 i/o 2 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 udm ldm s1 ldqs ldqs ldqs ldqs ldqs ldqs ldqs ldqs udqs udqs udqs udqs udqs udqs udqs udqs dqs0 dqs1 dqs5 dqs4 dm2 dqs6 dqs7 dqs3 ba0-ba1 a0-an ras cas we cke0 v dd v ss sdrams d0-d7 sdrams d0-d7 sdrams d0-d7 sdrams d0-d7 sdrams d0-d7 sdrams d0-d3 sdrams d0-d7 sdrams d0-d7, spd cke1 sdrams d4-d7 v dd and v dd q v ref sdrams d0-d7 v dd spd spd a0 serial presence detect (spd) a1 a2 scl sd a ck0 ck1 4 loads 4 loads sa0 sa1 ck 1 ck 0 sa2 v dd id wp s s s s s s s unless otherwise noted, resistor values are 22 ohm with +/- 5% tolerance note: dq wiring may differ from that described in this drawing; however dq/dm/dqs relationships are maintained as shown. v dd id strap connections: strap out (open): v dd = v dd q s0 s figure 3 block diagram - two ranks 32m 64 ddr sdram so-dimm hys64d32020hdl-6-c
data sheet 13 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules electrical characteristics 3 electrical characteristics 3.1 operating conditions attention: permanent damage to the device may occur if ?absolute maximum ratings? are exceeded. this is a stress rating only, and functional operation should be restricted to recommended operation conditions. exposure to absolute maximum rating conditions for extended periods of time may affect device reliability and exceeding only one of the values may cause irreversible damage to the integrated circuit. table 5 absolute maximum ratings parameter symbol values unit note/ test condition min. typ. max. voltage on i/o pins relative to v ss v in , v out ?0.5 ? v ddq + 0.5 v? voltage on inputs relative to v ss v in ?1 ? +3.6 v ? voltage on v dd supply relative to v ss v dd ?1 ? +3.6 v ? voltage on v ddq supply relative to v ss v ddq ?1 ? +3.6 v ? operating temperature (ambient) t a 0?+70 c? storage temperature (plastic) t stg -55 ? +150 c? power dissipation (per sdram component) p d ?1?w? short circuit output current i out ?50?ma? table 6 electrical characteristics and dc operating conditions parameter symbol values unit note/test condition 1) min. typ. max. device supply voltage v dd 2.3 2.5 2.7 v output supply voltage v ddq 2.3 2.5 2.7 v eeprom supply voltage v ddspd 2.3 2.5 3.6 v ? supply voltage, i/o supply voltage v ss , v ssq 00v? input reference voltage v ref 0.49 v ddq 0.5 v ddq 0.51 v ddq v 2) i/o termination voltage (system) v tt v ref ? 0.04 v ref + 0.04 v 3) input high (logic1) voltage v ih(dc) v ref + 0.15 v ddq + 0.3 v 6) input low (logic0) voltage v il(dc) ?0.3 v ref ? 0.15 v 6) input voltage level, ck and ck inputs v in(dc) ?0.3 v ddq + 0.3 v 6) input differential voltage, ck and ck inputs v id(dc) 0.36 v ddq + 0.6 v 6)4) vi-matching pull-up current to pull-down current vi ratio 0.71 1.4 ? 5)
data sheet 14 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules electrical characteristics input leakage current i i ?2 2 a any input 0 v v in v dd ; all other pins not under test =0v 6)7) output leakage current i oz ?5 5 a dqs are disabled; 0v v out v ddq 6) output high current, normal strength driver i oh ??16.2ma v out = 1.95 v 6) output low current, normal strength driver i ol 16.2 ? ma v out = 0.35 v 6) 1) 0 c t a 70 c 2) peak to peak ac noise on v ref may not exceed 2% v ref (dc) . v ref is also expected to track noise variations in v ddq . 3) v tt is not applied directly to the device. v tt is a system supply for signal termination resistors, is expected to be set equal to v ref , and must track variations in the dc level of v ref . 4) v id is the magnitude of the difference between the input level on ck and the input level on ck . 5) the ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 v. for a given output, it represents the maximum difference between pull-up and pull-down drivers due to process variation. 6) inputs are not recognized as valid until v ref stabilizes. 7) values are shown per ddr sdram component table 6 electrical characteristics and dc operating conditions (cont?d) parameter symbol values unit note/test condition 1) min. typ. max.
data sheet 15 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules electrical characteristics 3.2 current specification and conditions table 7 i dd conditions parameter symbol operating current 0 one bank; active/ precharge; dq, dm, and dqs inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. i dd0 operating current 1 one bank; active/read/precharge; burst length = 4; see component data sheet. i dd1 precharge power-down standby current all banks idle; power-down mode; cke v il,max i dd2p precharge floating standby current cs v ih,,min , all banks idle; cke v ih,min ; address and other control inputs changing once per clock cycle; v in = v ref for dq, dqs and dm. i dd2f precharge quiet standby current cs v ihmin , all banks idle; cke v ih,min ; v in = v ref for dq, dqs and dm; address and other control inputs stable at v ih,min or v il,max . i dd2q active power-down standby current one bank active; power-down mode; cke v ilmax ; v in = v ref for dq, dqs and dm. i dd3p active standby current one bank active; cs v ih,min ; cke v ih,min ; t rc = t ras,max ; dq, dm and dqs inputs changing twice per clock cycle; address and control inputs changing once per clock cycle. i dd3n operating current read one bank active; burst length = 2; reads; continuous burst; address and control inputs changing once per clock cycle; 50% of data outputs changing on every clock edge; cl = 2 for ddr266(a), cl = 3 for ddr333 and ddr400b; i out =0ma i dd4r operating current write one bank active; burst length = 2; writes; continuous burst; address and control inputs changing once per clock cycle; 50% of data outputs changing on every clock edge; cl = 2 for ddr266(a), cl = 3 for ddr333 and ddr400b i dd4w auto-refresh current t rc = t rfcmin , burst refresh i dd5 self-refresh current cke 0.2 v; external clock on i dd6 operating current 7 four bank interleaving with burst length = 4; see component data sheet. i dd7
data sheet 16 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules electrical characteristics table 8 i dd specification part number & organization hys64d16000hdl?6?c hys64d32020hdl?6?c unit note 1)2) 1) module i dd values are calculated on the basis of component i dd and can be measured differently according to dq loading capacity. 2) test condition for maximum values: v dd =2.7v, t a =10c 128mb 256mb 64 64 1 rank 2 ranks ?6 ?6 symbol typ. max. typ. max. i dd0 260 300 396 460 ma 3) 3) the module i ddx values are calculated from the i ddx values of the component data sheet as follows: m i ddx [component] + n i dd3n [component] with m and n number of components of rank 1 and 2; n =0 for 1 rank modules i dd1 320 380 456 540 ma 3)4) 4) dq i/o ( i ddq ) currents are not included in the calculations (see note 1) i dd2p 14 18 28 36 ma 5) 5) the module i ddx values are calculated from the corrponent i ddx data sheet values as: ( m + n ) i ddx [component] i dd2f 100 120 200 240 ma 5) i dd2q 320 96 640 192 ma 5) i dd3p 44 60 88 120 ma 5) i dd3n 136 160 272 320 ma 5) i dd4r 340 400 476 560 ma 3)4) i dd4w 360 440 496 600 ma 3) i dd5 540 640 676 800 ma 3) i dd6 66 1111 ma 5) i dd7 820 960 956 1120 ma 3)4)
data sheet 17 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules electrical characteristics 3.3 ac characteristics table 9 ac timing - absolute specifications ?6 parameter symbol ?6 unit note/ test condition 1) ddr333 min. max. dq output access time from ck/ck t ac ?0.7 +0.7 ns 2)3)4)5) dqs output access time from ck/ck t dqsck ?0.6 +0.6 ns 2)3)4)5) ck high-level width t ch 0.45 0.55 t ck 2)3)4)5) ck low-level width t cl 0.45 0.55 t ck 2)3)4)5) clock half period t hp min. ( t cl , t ch )ns 2)3)4)5) clock cycle time t ck 6 12 ns cl = 3.0 2)3)4)5) 6 12 ns cl = 2.5 2)3)4)5) 7.5 12 ns cl = 2.0 2)3)4)5) dq and dm input hold time t dh 0.45 ? ns 2)3)4)5) dq and dm input setup time t ds 0.45 ? ns 2)3)4)5) control and addr. input pulse width (each input) t ipw 2.2 ? ns 2)3)4)5)6) dq and dm input pulse width (each input) t dipw 1.75 ? ns 2)3)4)5)6) data-out high-impedance time from ck/ck t hz ?0.7 +0.7 ns 2)3)4)5)7) data-out low-impedance time from ck/ck t lz ?0.7 +0.7 ns 2)3)4)5)7) write command to 1 st dqs latching transition t dqss 0.75 1.25 t ck 2)3)4)5) dqs-dq skew (dqs and associated dq signals) t dqsq ? +0.45 ns tsopii 2)3)4)5) data hold skew factor t qhs ? +0.55 ns tsopii 2)3)4)5) dq/dqs output hold time t qh t hp ? t qhs ?ns 2)3)4)5) dqs input low (high) pulse width (write cycle) t dqsl,h 0.35 ? t ck 2)3)4)5) dqs falling edge to ck setup time (write cycle) t dss 0.2 ? t ck 2)3)4)5) dqs falling edge hold time from ck (write cycle) t dsh 0.2 ? t ck 2)3)4)5) mode register set command cycle time t mrd 2? t ck 2)3)4)5) write preamble setup time t wpres 0? ns 2)3)4)5)8) write postamble t wpst 0.40 0.60 t ck 2)3)4)5)9) write preamble t wpre 0.25 ? t ck 2)3)4)5) address and control input setup time t is 0.75 ? ns fast slew rate 3)4)5)6)10) 0.8 ? ns slow slew rate 3)4)5)6)10) address and control input hold time t ih 0.75 ? ns fast slew rate 3)4)5)6)10) 0.8 ? ns slow slew rate 3)4)5)6)10) read preamble t rpre 0.9 1.1 t ck 2)3)4)5) read postamble t rpst 0.40 0.60 t ck 2)3)4)5) active to precharge command t ras 42 70e+3 ns 2)3)4)5) active to active/auto-refresh command period t rc 60 ? ns 2)3)4)5)
data sheet 18 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules electrical characteristics auto-refresh to active/auto-refresh command period t rfc 72 ? ns 2)3)4)5) active to read or write delay t rcd 18 ? ns 2)3)4)5) precharge command period t rp 18 ? ns 2)3)4)5) active to autoprecharge delay t rap 18 ? ns 2)3)4)5) active bank a to active bank b command t rrd 12 ? ns 2)3)4)5) write recovery time t wr 15 ? ns 2)3)4)5) auto precharge write recovery + precharge time t dal t ck 2)3)4)5)11) internal write to read command delay t wtr 1? t ck 2)3)4)5) exit self-refresh to non-read command t xsnr 75 ? ns 2)3)4)5) exit self-refresh to read command t xsrd 200 ? t ck 2)3)4)5) average periodic refresh interval t refi ?7.8 s 2)3)4)5)12) 1) 0 c t a 70 c ; v ddq = 2.5 v 0.2 v, v dd = +2.5 v 0.2 v 2) input slew rate 1 v/ns 3) the ck/ck input reference level (for timing reference to ck/ck ) is the point at which ck and ck cross: the input reference level for signals other than ck/ck , is v ref . ck/ck slew rate are 1.0 v/ns. 4) inputs are not recognized as valid until v ref stabilizes. 5) the output timing reference level, as measured at the timing reference point indicated in ac characteristics (note 3) is v tt . 6) these parameters guarantee device timing, but they are not necessarily tested on each device. 7) t hz and t lz transitions occur in the same access time windows as valid data transitions. these parameters are not referred to a specific voltage level, but specify when the device is no longer driving (hz), or begins driving (lz). 8) the specific requirement is that dqs be valid (high, low, or some point on a valid transition) on or before this ck edge. a valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previously in progress on the bus, dqs will be transitioning from hi-z to logic low. if a previous write was in progress, dqs could be high, low, or transitioning from high to low at this time, depending on t dqss . 9) the maximum limit for this parameter is not a device limit. the device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. 10) fast slew rate 1.0 v/ns , slow slew rate 0.5 v/ns and < 1 v/ns for command/address and ck & ck slew rate > 1.0 v/ ns, measured between v oh(ac) and v ol(ac) . 11) for each of the terms, if not already an integer, round to the next highest integer. t ck is equal to the actual system clock cycle time. 12) a maximum of eight autorefresh commands can be posted to any given ddr sdram device. table 9 ac timing - absolute specifications ?6 parameter symbol ?6 unit note/ test condition 1) ddr333 min. max.
data sheet 19 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules spd contents 4 spd contents table 10 spd codes for hys64d[32020/16000]hdl?6?c part number & organization hys64d16000hdl?6?c hys64d32020hdl?6?c 128mb 256mb 64 64 1 rank 2 ranks ?6 ?6 byte# description hex hex 0 programmed spd bytes in e2prom 80 80 1 total number of bytes in e2prom 08 08 2 memory type ddr = 07h 07 07 3 # of row addresses 0d 0d 4 # number of column addresses 09 09 5 # of dimm ranks 01 02 6 data width (lsb) 40 40 7 data width (msb) 00 00 8 interface voltage levels 04 04 9 tck @ clmax (byte 18) [ns] 60 60 10 tac sdram @ clmax (byte 18) [ns] 70 70 11 dimm configuration type (non- / ecc) 00 00 12 refresh rate 82 82 13 primary sdram width 10 10 14 error checking sdram width 00 00 15 tccd [cycles] 01 01 16 burst length supported 0e 0e 17 number of banks on sdram 04 04 18 cas latency 0c 0c 19 cs latency 01 01 20 we (write) latency 02 02 21 dimm attributes 20 20 22 component attributes c1 c1 23 tck @ clmax -0.5 (byte 18) [ns] 75 75 24 tac sdram @ clmax -0.5 [ns] 70 70 25 tck @ clmax -1 (byte 18) [ns] 00 00 26 tac sdram @ clmax -1 [ns] 00 00 27 trpmin (ns) 48 48 28 trrdmin [ns] 30 30 29 trcdmin [ns] 48 48 30 trasmin [ns] 2a 2a 31 module density per rank 20 20 32 tas, tcs [ns] 75 75 33 tah, tch [ns] 75 75 34 tds [ns] 45 45
hys64d[32020/16000]hdl?6?c small outline ddr sdram modules spd contents data sheet 20 rev. 0.5, 2003-08 35 tdh [ns] 45 45 36 - 40 not used 00 00 41 trcmin [ns] 3c 3c 42 trfcmin [ns] 48 48 43 tckmax [ns] 30 30 44 tdqsqmax [ns] 2d 2d 45 tqhsmax [ns] 55 55 46 - 61 not used 00 00 62 spd revision 00 00 63 checksum of byte 0-62 (lsb only) e8 e9 64 jedec id code for infineon c1 c1 65 jedec id code for infineon 00 00 66 jedec id code for infineon 00 00 67 jedec id code for infineon 00 00 68 jedec id code for infineon 00 00 69 jedec id code for infineon 00 00 70 jedec id code for infineon 00 00 71 jedec id code for infineon 00 00 72 module manufacturer location xx xx 73 part number, char 1 36 36 74 part number, char 2 34 34 75 part number, char 3 44 44 76 part number, char 4 31 33 77 part number, char 5 36 32 78 part number, char 6 30 30 79 part number, char 7 30 32 80 part number, char 8 30 30 81 part number, char 9 48 48 82 part number, char 10 44 44 83 part number, char 11 4c 4c 84 part number, char 12 36 36 85 part number, char 13 43 43 86 part number, char 14 20 20 87 part number, char 15 20 20 88 part number, char 16 20 20 89 part number, char 17 20 20 table 10 spd codes for hys64d[32020/16000]hdl?6?c part number & organization hys64d16000hdl?6?c hys64d32020hdl?6?c 128mb 256mb 64 64 1 rank 2 ranks ?6 ?6 byte# description hex hex
data sheet 21 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules spd contents 90 part number, char 18 20 20 91 module revision code xx xx 92 test program revision code xx xx 93 module manufacturing date year xx xx 94 - 98 module manufacturing date week xx xx 99 - 127 not used 00 00 table 10 spd codes for hys64d[32020/16000]hdl?6?c part number & organization hys64d16000hdl?6?c hys64d32020hdl?6?c 128mb 256mb 64 64 1 rank 2 ranks ?6 ?6 byte# description hex hex
hys64d[32020/16000]hdl?6?c small outline ddr sdram modules package outlines data sheet 22 rev. 0.5, 2003-08 5 package outlines figure 4 package outlines ? raw card c ddr-sdram so-dimm HYS64D16000HDL-6-C l-dim-200-011 67.6 63.6 0.1 4 31.75 1 0.1 11.4 47.4 18.45 0.1 (2.4) 1.8 0.1 0.1 0.1 (2.45) 1 0.1 1.5 (2.7) 0.1 4 6 20 2 min. 2.4 max. 0.1 1 0.15 burnished, no burr allowed 0.1 0.6 0.03 0.45 detail of contacts -0.18 0.25 2.55 (2.45) (2.15) 0.05 1.8 (2.15) 100 200 101
data sheet 23 rev. 0.5, 2003-08 hys64d[32020/16000]hdl?6?c small outline ddr sdram modules package outlines figure 5 package outlines ? raw card a ddr sdram so-dimm hys64d32020hdl-6-c l-dim-200-006 67.6 2 min. 20 0.1 0.05 1.8 0.1 18.45 0.1 1.8 (2.4) 0.1 11.4 (2.15) 0.1 47.4 0.1 63.6 0.1 1.5 (2.7) 0.1 1 0.1 4 3.8 max. 31.75 0.15 0.1 1 0.1 6 0.1 4 1 200 detail of contacts 0.25 -0.18 0.45 0.03 0.6 0.1 2.55 burnished, no burr allowed (2.45) 101 100 (2.15) (2.45)
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